Scott Dietrich, S. A. Vitkalov, D. V. Dmitriev, A. A. Bykov
Published 2011-10-18Version 1
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.
Comments: 7 pages, 5 figures
Effect of illumination on quantum lifetime in GaAs quantum wells
Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells
Nonlinear response in overlapping and separated Landau levels of GaAs quantum wells
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