Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev

Published 2009-03-06Version 1

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.