arXiv Analytics

Sign in

arXiv:1107.3409 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Revealing the grain structure of graphene grown by chemical vapor deposition

Péter Nemes - Incze, Kwon Jae Yoo, Levente Tapasztó, Gergely Dobrik, János Lábár, Zsolt E. Horváth, Chanyong Hwang, László Péter Biró

Published 2011-07-18Version 1

The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition.

Related articles: Most relevant | Search more
arXiv:1209.0148 [cond-mat.mes-hall] (Published 2012-09-02)
Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
arXiv:1302.1310 [cond-mat.mes-hall] (Published 2013-02-06)
Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport
Guang-Xin Ni et al.
arXiv:1307.5744 [cond-mat.mes-hall] (Published 2013-07-22)
Self-Assembled Nanostructure Formation in Chemical Vapor Deposition