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arXiv:1105.5399 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

N. M. R. Peres, J. M. B. Lopes dos Santos, A. H. Castro Neto

Published 2011-05-26, updated 2011-06-13Version 2

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.

Comments: The version v2 has an extra figure as supplementary information
Journal: EuroPhysics Letters, 95 18001 (2011)
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