{
  "id": "1105.5399",
  "version": "v2",
  "published": "2011-05-26T20:37:08.000Z",
  "updated": "2011-06-13T08:31:59.000Z",
  "title": "Coulomb Drag and High Resistivity Behavior in Double Layer Graphene",
  "authors": [
    "N. M. R. Peres",
    "J. M. B. Lopes dos Santos",
    "A. H. Castro Neto"
  ],
  "comment": "The version v2 has an extra figure as supplementary information",
  "journal": "EuroPhysics Letters, 95 18001 (2011)",
  "doi": "10.1209/0295-5075/95/18001",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci",
    "cond-mat.str-el"
  ],
  "abstract": "We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2011-06-13T08:31:59.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "coulomb drag",
      "high resistivity behavior",
      "double layer graphene samples",
      "ultra-clean graphene double layers",
      "double layer graphene system"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "EPL (Europhysics Letters)",
      "year": 2011,
      "month": "Jul",
      "volume": 95,
      "number": 1,
      "pages": 18001
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011EL.....9518001P"
    }
  }
}