Gennady I. Zebrev
Published 2011-02-11Version 1
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.
Comments: 24 pages, 13 figures, a chapter in "Graphene, Theory, Research and Applications", INTECH
Static Non-linearity in Graphene Field Effect Transistors
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Dual Origin of Room Temperature Sub-Terahertz Photoresponse in Graphene Field Effect Transistors
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