{
  "id": "1102.2348",
  "version": "v1",
  "published": "2011-02-11T14:02:35.000Z",
  "updated": "2011-02-11T14:02:35.000Z",
  "title": "Graphene Field Effect Transistors: Diffusion-Drift Theory",
  "authors": [
    "Gennady I. Zebrev"
  ],
  "comment": "24 pages, 13 figures, a chapter in \"Graphene, Theory, Research and Applications\", INTECH",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-02-11T14:02:35.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene field effect transistors",
      "diffusion-drift theory",
      "current continuity equation",
      "i-v characteristics model",
      "graphene fets channel"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 24,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011arXiv1102.2348Z"
    }
  }
}