Single-dopant resonance in a single-electron transistor

V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche, M. Sanquer, L. I. Glazman

Published 2010-12-26Version 1

Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate equations theory developed in parallel with the experiment.