M. A. Laakso, T. Ojanen, T. T. Heikkila
Published 2008-02-14, updated 2008-03-10Version 2
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide range of parameters, we discover a finite reactive part even under Coulomb blockade due to virtual processes. At low frequencies this can be described by an effective capacitance. This effect can be probed with microwave reflection measurements in radio-frequency (rf) SET provided that the capacitance of the surroundings does not completely mask that of the SET.
Comments: 4 pages, 5 figures In the past few days we have noticed a serious sign error in the theory presented in this preprint, which essentially changes the sign of the capacitance correction. That is, otherwise the physics is as described, but the sign is incorrect. The new version reflects these changes
Journal: Phys. Rev. B 77, 233303 (2008)
Single-dopant resonance in a single-electron transistor
From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
Cotunneling and renormalization effects for the single-electron transistor
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