David M. Toyli, Christoph D. Weis, Gregory D. Fuchs, Thomas Schenkel, David D. Awschalom
Published 2010-07-01, updated 2010-07-03Version 2
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
Comments: This paper has been withdrawn by the authors. 14 pages, 3 figures; Posting has been removed due to editorial request from ACS Nano Letters; This version has been removed by arXiv admin because it contains an inappropriate withdrawal notice
Journal: Nano Lett., Article ASAP (2010)
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