arXiv:1004.3179 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Giant inelastic tunneling in epitaxial graphene mediated by localized states
J. Cervenka, K. van de Ruit, C. F. J. Flipse
Published 2010-04-19Version 1
Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.
Comments: 6 pages, 5 figures, accepted for publication in Phys. Rev. B
Categories: cond-mat.mes-hall, cond-mat.mtrl-sci
Keywords: localized states, epitaxial graphene, giant inelastic tunneling, resolved scanning tunneling microscopy, interface layer
Tags: journal article
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