{
  "id": "1004.3179",
  "version": "v1",
  "published": "2010-04-19T12:59:12.000Z",
  "updated": "2010-04-19T12:59:12.000Z",
  "title": "Giant inelastic tunneling in epitaxial graphene mediated by localized states",
  "authors": [
    "J. Cervenka",
    "K. van de Ruit",
    "C. F. J. Flipse"
  ],
  "comment": "6 pages, 5 figures, accepted for publication in Phys. Rev. B",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-04-19T12:59:12.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "63.22.-m",
      "68.65.Pq",
      "68.37.-d"
    ],
    "keywords": [
      "localized states",
      "epitaxial graphene",
      "giant inelastic tunneling",
      "resolved scanning tunneling microscopy",
      "interface layer"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1103/PhysRevB.81.205403",
      "journal": "Physical Review B",
      "year": 2010,
      "month": "May",
      "volume": 81,
      "number": 20,
      "pages": 205403
    },
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010PhRvB..81t5403C"
    }
  }
}