Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto, Daniel Neumaier, Heinrich Kurz

Published 2010-01-28Version 1

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.