{
  "id": "1001.5213",
  "version": "v1",
  "published": "2010-01-28T16:38:09.000Z",
  "updated": "2010-01-28T16:38:09.000Z",
  "title": "Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature",
  "authors": [
    "Bartholomaeus N. Szafranek",
    "Daniel Schall",
    "Martin Otto",
    "Daniel Neumaier",
    "Heinrich Kurz"
  ],
  "comment": "3 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-01-28T16:38:09.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "71.20.Tx",
      "73.22.Pr",
      "78.67.Wj",
      "72.80.Vp"
    ],
    "keywords": [
      "tunable band gap",
      "room temperature",
      "electrical observation",
      "double-gated bilayer graphene nanoribbons",
      "charge neutrality point"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1063/1.3364139",
      "journal": "Applied Physics Letters",
      "year": 2010,
      "month": "Mar",
      "volume": 96,
      "number": 11,
      "pages": 112103
    },
    "note": {
      "typesetting": "TeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010ApPhL..96k2103S"
    }
  }
}