Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

O. V. Feklisova, E. B. Yakimov, L. V. Arapkina, V. A. Chapnin, K. V. Chizh, V. P. Kalinushkin, V. A. Yuryev

Published 2009-08-10Version 1

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.