{
  "id": "0908.1287",
  "version": "v1",
  "published": "2009-08-10T09:41:16.000Z",
  "updated": "2009-08-10T09:41:16.000Z",
  "title": "Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures",
  "authors": [
    "O. V. Feklisova",
    "E. B. Yakimov",
    "L. V. Arapkina",
    "V. A. Chapnin",
    "K. V. Chizh",
    "V. P. Kalinushkin",
    "V. A. Yuryev"
  ],
  "comment": "Reported at the 25th International Conference on Defects in Semiconductors, St. Petersburg, Russia, July 20-24, 2009",
  "journal": "Physica B 404 (2009) 4705--4707",
  "doi": "10.1016/j.physb.2009.08.164",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-08-10T09:41:16.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "low temperature",
      "surface grown",
      "ge nanoclusters",
      "capacitance investigation",
      "qd arrangements demonstrated essential distinctions"
    ],
    "tags": [
      "conference paper",
      "journal article"
    ],
    "publication": {
      "journal": "Physica B Condensed Matter",
      "year": 2009,
      "month": "Dec",
      "volume": 404,
      "number": "23-24",
      "pages": 4705
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhyB..404.4705F"
    }
  }
}