arXiv Analytics

Sign in

arXiv:0904.2249 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Quasiparticle Transformation During a Metal-Insulator Transition in Graphene

Aaron Bostwick, Jessica L. McChesney, Konstantin Emtsev, Thomas Seyller, Karsten Horn, Stephan D. Kevan, Eli Rotenberg

Published 2009-04-15Version 1

Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.

Related articles: Most relevant | Search more
arXiv:1606.04451 [cond-mat.mes-hall] (Published 2016-06-14)
Metal-insulator transition in films of doped semiconductor nanocrystals
arXiv:2201.02561 [cond-mat.mes-hall] (Published 2022-01-07)
Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
Muqing Yu et al.
arXiv:0709.3847 [cond-mat.mes-hall] (Published 2007-09-24, updated 2008-08-06)
External Control of a Metal-Insulator Transition in GaMnAs Wires