arXiv:0709.3847 [cond-mat.mes-hall]AbstractReferencesReviewsResources
External Control of a Metal-Insulator Transition in GaMnAs Wires
Published 2007-09-24, updated 2008-08-06Version 2
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magneto resistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.
Comments: Major revised final version
Journal: Phys. Rev. Lett. 101, 016801 (2008)
Categories: cond-mat.mes-hall, cond-mat.mtrl-sci
Keywords: metal-insulator transition, external control, gamnas wires, large anisotropic magneto resistance effects, weak external magnetic field
Tags: journal article
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