arXiv:0811.3222 [cond-mat.mes-hall]AbstractReferencesReviewsResources
Tunneling between edge states in a quantum spin Hall system
Anders Ström, Henrik Johannesson
Published 2008-11-19, updated 2009-03-10Version 2
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.
Comments: 4 pages, 3 figures; published version
Journal: Phys. Rev. Lett. 102, 096806 (2009)
Categories: cond-mat.mes-hall, cond-mat.str-el
Keywords: quantum spin hall system, edge states, two-terminal resistance measurement, net spin tunneling current, point contact
Tags: journal article
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