G. W. Semenoff, V. Semenoff, Fei Zhou
Published 2008-05-31Version 1
The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.
Negative differential magneto-resistance in ferromagnetic wires with domain walls
Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer
The dynamics of a domain wall in ferrimagnets driven by spin-transfer torque
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