Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

V. Senz, T. Heinzel, T. Ihn, K. Ensslin, G. Dehlinger, D. Gruetzmacher, U. Gennser

Published 1999-10-15Version 1

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.