arXiv:cond-mat/9903017AbstractReferencesReviewsResources
Low-Temperature Dephasing in Disordered Conductors: the Effect of ``1/f'' Fluctuations
Yoseph Imry, Hidetoshi Fukuyama, Peter Schwab
Published 1999-03-01Version 1
Electronic quantum effects in disordered conductors are controlled by the dephasing rate of conduction electrons. This rate is expected to vanish with the temperature. We consider the very intriguing recently reported apparent saturation of this dephasing rate in several systems at very low temperatures. We show that the ``standard model'' of a conductor with static defects can {\em not} have such an effect. However, allowing some dynamics of the defects may produce it.
Comments: 6pages
Journal: EPL 47, 608 (1999)
Categories: cond-mat.mes-hall
Keywords: disordered conductors, low-temperature dephasing, fluctuations, electronic quantum effects, dephasing rate
Tags: journal article
Related articles: Most relevant | Search more
arXiv:cond-mat/9908099 (Published 1999-08-06)
Low-temperature dephasing in disordered conductors: experimental aspects
arXiv:cond-mat/0207692 (Published 2002-07-30)
The importance of friction in the description of low-temperature dephasing
arXiv:1402.0040 [cond-mat.mes-hall] (Published 2014-02-01)
Gate-tunable Kondo resistivity and dephasing rate in graphene studied by numerical renormalization group calculations