Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

Y. Hanein, D. Shahar, J. Yoon, C. C. Li, D. C. Tsui, Hadas Shtrikman

Published 1998-08-24Version 1

The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.