Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas

S. A. Studenikin, A. S. Sachrajda, J. A. Gupta, Z. R. Wasilewski, O. M. Fedorych, M. Byszewski, D. K. Maude, M. Potemski, M. Hilke, L. N. Pfeiffer, K. W. West

Published 2006-02-03, updated 2007-11-20Version 2

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.