L. Smrčka, P. Vašek, P. Svoboda, N. A. Goncharuk, O. Pacherová, Yu. Krupko, Y. Sheikin
Published 2005-10-14Version 1
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
Comments: 4 pages, 3 figures, elsart/PHYEAUTH macros; presented on the EP2DS-16 Conference in Albuquerque, New Mexico USA. To be published in Physica E
Journal: Physica E 34 (2006) 632-635
Coexistence of Van Hove Singularities and Pseudomagnetic Fields in Modulated Graphene Bilayer
Topological analysis of the quantum Hall effect in graphene: Dirac-Fermi transition across van Hove singularities and the edge vs bulk quantum numbers
Evolution of Flat Band and Van Hove Singularities with Interlayer Coupling in Twisted Bilayer Graphene
