L. P. Rokhinson, L. N. Pfeiffer, K. W. West
Published 2005-09-16, updated 2006-04-05Version 2
We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the low-density regime, when the conductance of a point contact is tuned to <2e^2/h. Polarization is stronger in samples with a well defined ``0.7 structure''
Comments: revised discussion and data analysis, accepted to PRL
Spin fluctuations in the 0.7-anomaly in quantum point contacts
Single-hole transistor in p-type GaAs/AlGaAs heterostructures
Quantum Point Contacts
