arXiv:cond-mat/0508500 Abstract

arXiv:cond-mat/0508500Abstract References Reviews Resources

Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

Yasuhiro Utsumi, Dmitri S. Golubev, Gerd Schön

Published 2005-08-21Version 1

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

Comments: 4 pages, 1 figure

Journal: Phys. Rev. Lett. 96, 086803 (2006)

DOI: 10.1103/PhysRevLett.96.086803

Categories: cond-mat.mes-hall, cond-mat.str-el

Keywords: full counting statistics, single-electron transistor, non-equilibrium effects, intermediate conductance, intermediate strength tunnel conductance

Tags: journal article

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