arXiv Analytics

Sign in

arXiv:cond-mat/0507727AbstractReferencesReviewsResources

Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts

Soumik Mukhopadhyay, I. Das

Published 2005-07-29, updated 2006-01-19Version 3

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.

Comments: Replaced with revised version and new figure, 6 figures, RevTex4
Journal: Phys. Rev. Lett. 96, 026601 (2006)
Related articles: Most relevant | Search more
arXiv:1511.07561 [cond-mat.mes-hall] (Published 2015-11-24)
Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles
arXiv:2210.16727 [cond-mat.mes-hall] (Published 2022-10-30)
Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers
W. G. Wang et al.
arXiv:2206.14587 [cond-mat.mes-hall] (Published 2022-06-29)
Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque