D. A. Rodrigues, A. D. Armour
Published 2005-06-16, updated 2005-06-24Version 2
We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find that the SETs act on the resonator like two independent heat baths. The coupling to the resonator generates positive correlations in the currents flowing through each of the SETs as well as between the two currents. In the regime where the dynamics of the resonator is dominated by the back-action of the SETs, these positive correlations can lead to parametrically large enhancements of the low frequency current noise. These noise properties can be understood in terms of the effects on the SET currents of fluctuations in the state of a resonator in thermal equilibrium which persist for times of order the resonator damping time.
Comments: Accepted for publication in Phys. Rev. B
Dynamics of a nanomechanical resonator coupled to a superconducting single-electron transistor
Discrete Charging in Polysilicon Gates of Single Electron Transistors
Fano interference effect on the transition spectrum of single electron transistors
