Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

S. S. Murzin, S. I. Dorozhkin, D. K. Maude, A. G. M. Jansen

Published 2005-04-11, updated 2006-01-10Version 3

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (\sigma_{xy},\sigma_{xx}) point determines a complete flow line.