Kai-Mei C. Fu, Charles Santori, Colin Stanley, M. C. Holland, Yoshihisa Yamamoto
Published 2005-04-01, updated 2007-06-26Version 2
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
Comments: 5 pages, 4 figures replaced 6/25/2007 with PRL version
Journal: Phys. Rev. Lett. 95, 187405 (2005)
Quantum Interference and Coherent Population Trapping in a Double Quantum Dot
Thermal orientation of electron spins
Magnetic imaging and statistical analysis of the metamagnetic phase transition of FeRh with electron spins in diamond
