Yuanbo Zhang, Joshua P. Small, Michael E. S. Amori, Philip Kim
Published 2004-10-13Version 1
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.
Comments: 4 pages, 4 figures included, submitted to Phys. Rev. Lett
Journal: Phys. Rev. Lett. 94, 176803 (2005)
Electric field modulation of topological order in thin film semiconductors
Nanomachining of mesoscopic graphite
Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
