Isao Maruyama, Naokazu Shibata, Kazuo Ueda
Published 2004-10-04Version 1
The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model for the T-shaped quantum dot. The conductance as a function of the gate voltage is generally characterized by a Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high and low temperature regions compared with the Kondo temperature T_K: two Fano asymmetric peaks at high temperatures and the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the Finite temperature density matrix renormalization group method (FT-DMRG).
Comments: 8 pages, 7 figures
Journal: J. Phys. Soc. Jpn. 73, 3239 (2004).
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