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Shot noise in resonant tunneling through an interacting quantum dot with intradot spin-flip scattering

Ivana Djuric, Bing Dong, H. L. Cui

Published 2004-06-28, updated 2004-07-19Version 2

In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.

Comments: Some typos correction. 6 pages, 3 figures, based on work presented at the 2004 IEEE NTC Quantum Device Technology Workshop, accepted for publication by IEEE transactions on Nanotechnology
Journal: IEEE transactions on Nanotechnology 4, 71, (2005)
Categories: cond-mat.mes-hall
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