Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells

A. V. Filinov, C. Riva, F. M. Peeters, Yu. E. Lozovik, M. Bonitz

Published 2004-01-23, updated 2004-04-08Version 2

We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells. We discuss in detail the dependence of the binding energy on the size of the well width fluctuations and on the quantum-well width. The numerical results for the well width dependence of the exciton, trions and biexciton binding energy are in good quantitative agreement with the available experimental data.