arXiv:cond-mat/0311077 Abstract

arXiv:cond-mat/0311077Abstract References Reviews Resources

Quantum dots based on spin properties of semiconductor heterostructures

Published 2003-11-04, updated 2004-02-12Version 2

The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.

Comments: 9 pages, 3 figures. Accepted in PRB (Brief Report) (2004)

Journal: Phys. Rev. B 69, 153308 (2004)

DOI: 10.1103/PhysRevB.69.153308

Categories: cond-mat.mes-hall, cond-mat.mtrl-sci

Keywords: semiconductor heterostructures, mean field calculations, semiconductor quantum dots, peculiar spin properties, predict confined one-electron states

Tags: journal article

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