arXiv Analytics

Sign in

arXiv:cond-mat/0310625AbstractReferencesReviewsResources

The Kondo effect in C$_{60}$ single-molecule transistors

L. H. Yu, D. Natelson

Published 2003-10-27Version 1

We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low temperatures each transistor acts as a single-electron device in the Coulomb blockade regime. Resonances in the differential conductance indicate vibrational excitations consistent with a known mode of C$_{60}$. In several devices we observe conductance features characteristic of the Kondo effect, a coherent many-body state comprising an unpaired spin on the molecule coupled by exchange to the conduction electrons of the leads. The inferred Kondo temperature typically exceeds 50 K, and signatures of the vibrational modes persist into the Kondo regime.

Comments: 5 pages, four figures. Submitted to Nano Letters
Journal: Nano Lett. 4, 79 (2004)
Related articles: Most relevant | Search more
arXiv:cond-mat/9901144 (Published 1999-01-15)
Transport in multilevel quantum dots: from the Kondo effect to the Coulomb blockade regime
arXiv:cond-mat/0310331 (Published 2003-10-15)
Quantum transport through double-dot Aharonov-Bohm interferometry in Coulomb blockade regime
arXiv:cond-mat/0104211 (Published 2001-04-11, updated 2002-03-14)
Full counting statistics of a charge pump in the Coulomb blockade regime