arXiv:cond-mat/0309496AbstractReferencesReviewsResources
Quantum Pumping and Quantized Magnetoresistance in a Hall Bar
Published 2003-09-22Version 1
We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance $R_H$ that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance $R_{xx}$ does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of $R_H$ and $R_{xx}$.
Comments: RevTeX, 3 figures
Journal: Phys. Rev. B 68, 205316 (2003)
Categories: cond-mat.mes-hall
Keywords: hall bar, quantized magnetoresistance, quantum pumping, usual integer quantum hall effect, hall resistance
Tags: journal article
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