Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot

C. Fuhner, U. F. Keyser, R. J. Haug, D. Reuter, A. D. Wieck

Published 2003-07-23Version 1

We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and V_{SD} dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.