arXiv:cond-mat/0304318 Abstract

arXiv:cond-mat/0304318Abstract References Reviews Resources

Effect of bulk inversion asymmetry on the Datta-Das transistor

Published 2003-04-14Version 1

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.

Comments: 4 pages, Revtex4, 4 EPS figures

Journal: Phys. Rev. B68, 081201(R) (2003)

DOI: 10.1103/PhysRevB.68.081201

Categories: cond-mat.mes-hall

Keywords: bulk inversion asymmetry, datta-das transistor, datta-das spin field-effect transistor, channel direction optimal, rashba interaction

Tags: journal article

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