Electron-electron interaction at decreasing $k_Fl$

G. M. Minkov, O. E. Rut, A. V. Germanenko, A. A. Sherstobitov, V. I. Shashkin, O. I. Khrykin, B. N. Zvonkov

Published 2002-09-25Version 1

The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_Fl$ decrease.