arXiv:cond-mat/0111504AbstractReferencesReviewsResources
Comment on "Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors"
C. Timm, F. Schäfer, F. von Oppen
Published 2001-11-27Version 1
In a recent Letter, Berciu and Bhatt have presented a mean-field theory of ferromagnetism in III-V semiconductors doped with manganese, starting from an impurity band model. We show that this approach gives an unphysically broad impurity band and is thus not appropriate for (Ga,Mn)As containing 1-5% Mn. We also point out a microscopically unmotivated sign change in the overlap integrals in the Letter. Without this sign change, stable ferromagnetism is not obtained.
Comments: 2 pages RevTeX, including 1 figure
Categories: cond-mat.dis-nn, cond-mat.mtrl-sci
Related articles: Most relevant | Search more
Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors
arXiv:cond-mat/0106406 (Published 2001-06-20)
Suppression of carrier induced ferromagnetism by composition and spin fluctuations in diluted magnetic semiconductors
arXiv:1511.02127 [cond-mat.dis-nn] (Published 2015-11-06)
Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors