arXiv:cond-mat/0110484AbstractReferencesReviewsResources
Anomalous Hall effect in ferromagnetic semiconductors
T. Jungwirth, Qian Niu, A. H. MacDonald
Published 2001-10-22Version 1
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors.
Comments: 4 pages, 2 figures
Categories: cond-mat.mes-hall
Keywords: anomalous hall effect, ferromagnetic semiconductors, anomalous hall conductivity dominates, disorder independent contribution, itinerant electron ferromagnet
Tags: journal article
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