Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's

R. Fletcher, V. M. Pudalov, A. D. B. Radcliffe, C. Possanzini

Published 2000-02-28Version 1

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a function of electron density which is very similar to that expected for an Anderson transition. In particular, when approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature.