Effective tuning methods for few-electron regime in gate-defined quantum dots

Chanuk Yang, Hwanchul Jung, Hyung Kook Choi, Yunchul Chung

Published 2024-12-16Version 1

We present systematic methods for compensating gate crosstalk effects in gate-defined quantum dots (QDs), to allow the observation of Coulomb blockade peaks from the few-electron regime (N = 1) to N \approx 20. Gate crosstalk, where adjustments to one gate voltage unintentionally affect other gate-controlled parameters, makes it difficult to control tunneling rates and energy states of the QD separately. To overcome this crosstalk effect, we present two approaches: maintaining constant conductance of two quantum point contacts (QPCs) forming the QD by compensating the effect of the plunger gate voltage on the QPCs, and interpolating between gate voltage conditions optimized for QD observation at several electron numbers. These approaches minimize crosstalk effects by dynamically adjusting barrier gate voltages as a function of plunger gate voltage. Using these methods, we successfully observed Coulomb blockade peaks throughout the entire range from N = 1 to N \approx 20. Our methods provide a simple and effective solution for observing Coulomb blockade peaks over a wide range of electron numbers while maintaining control over the quantum states in the dot.