arXiv Analytics

Sign in

arXiv:2408.09828 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Induced charge generated by a Coulomb impurity in transition metal dichalcogenides

V. K. Ivanov, I. S. Terekhov

Published 2024-08-19Version 1

We calculate analytically the charge density $\rho_{\text{ind}}(\boldsymbol{r})$ at small distances induced by a Coulomb impurity in two-dimensional transition metal dichalcogenides. The calculations were performed exactly in the coupling constant. We found the first three leading terms of the charge density asymptotics at small distances. Using this result, we demonstrate that the impurity with charge number $Z=1$ remains subcritical at any value of the coupling constant, whereas impurities with higher charge number could become supercritical at certain coupling constant values. Such a behavior is similar to that in graphene.

Related articles: Most relevant | Search more
arXiv:1810.01302 [cond-mat.mes-hall] (Published 2018-10-02)
Crystal field, ligand field, and interorbital effects in two-dimensional transition metal dichalcogenides across the periodic table
arXiv:1702.02260 [cond-mat.mes-hall] (Published 2017-02-08)
Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides
arXiv:2208.11031 [cond-mat.mes-hall] (Published 2022-08-23)
Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment