Sub-100-fs formation of dark excitons in monolayer WS$_2$

Pavel V. Kolesnichenko, Lukas Wittenbecher, Qianhui Zhang, Run Yan Teh, Chandni Babu, Michael S. Fuhrer, Anders Mikkelsen, Donatas Zigmantas

Published 2024-03-13Version 1

Two-dimensional semiconductors based on transition metal dichalcogenides are promising for electronics and optoelectronics applications owing to their properties governed by strongly-bound bright and dark excitons. Momentum-forbidden dark excitons have recently received attention as better alternatives to bright excitons for long-range transport. However, accessing the dynamics of dark excitons is challenging experimentally. The most direct, but very complicated, experiment is transient angle-resolved photoemission electron spectroscopy: sub-100-fs formation of K-$\Lambda$-excitons in monolayer WS$_2$ has been identified previously taking advantage of momentum resolution of detected signals [1]. Here, we use a simpler setting of transient photoemission electron microscopy (with spatial resolution of 75 nm), which is inherently sensitive to dark K-$\Lambda$ excitons in monolayers of transition metal dichalcogenide and has exceptionally high temporal resolution of 13 fs. We are able to directly observe intervalley scattering (dark-exciton formation) in monolayer WS$_2$ with scattering rates in the range of 14-50 fs followed by picosecond-scale dynamics mediated by defects.