arXiv Analytics

Sign in

arXiv:2306.04552 [cond-mat.mes-hall]AbstractReferencesReviewsResources

High temperature, gate-free quantum anomalous Hall effect with an active capping layer

Hee Taek Yi, Deepti Jain, Xiong Yao, Seongshik Oh

Published 2023-06-07Version 1

Quantum anomalous Hall effect (QAHE) was discovered a decade ago, but is still not utilized beyond a handful of research groups, due to numerous limitations such as extremely low temperature, electric field-effect gating requirement, small sample sizes and environmental aging effect. Here, we present a robust platform that provides effective solutions to these problems. Specifically, on this platform, we observe QAH signatures at record high temperatures, with the Hall conductance of 1.00 e2/h at 2.0 K, 0.98 e2/h at 4.2 K, and 0.92 e2/h at 10 K, on centimeter-scale substrates, without electric-field-effect gating. The key ingredient is an active CrOx capping layer, which substantially boosts the ferromagnetism while suppressing environmental degradation. With this development, QAHE will now be accessible to much broader applications than before.

Comments: 20 pages, 8 figures, Accepted for publication in Nano Letters, https://pubs.acs.org/doi/full/10.1021/acs.nanolett.3c01313
Related articles: Most relevant | Search more
arXiv:1510.00706 [cond-mat.mes-hall] (Published 2015-10-02)
Importance of Four-Phonon Scattering at High Temperatures or for Strongly Anharmonic Materials
arXiv:cond-mat/0107370 (Published 2001-07-17)
High Temperature PI/2-SQUID
arXiv:2304.03149 [cond-mat.mes-hall] (Published 2023-04-06)
Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
Taoufiq Ouaj et al.