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arXiv:2109.07837 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Simultaneous driving of semiconductor spin qubits at the fault-tolerant threshold

W. I. L. Lawrie, M. Russ, F. van Riggelen, N. W. Hendrickx, S. L. de Snoo, A. Sammak, G. Scappucci, M. Veldhorst

Published 2021-09-16Version 1

The promise of quantum information technology hinges on the ability to control large numbers of qubits with high-fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, for one, two and four simultaneously driven qubits. We find that by carefully tuning the qubit parameters, we achieve native gate fidelities of 99.9899(4)%, 99.904(4)% and 99.00(4)% respectively. We also find that cross talk with next-nearest neighbor pairs induces errors that can be imperceptible within the error margin, indicating that cross talk can be highly local. These characterizations of the single-qubit gate quality and the ability to operate simultaneously are crucial aspects for scaling up germanium based quantum information technology.

Comments: Main text 7 pages, 3 figures. Supp Info 5 pages, 4 figures, 2 tables
Categories: cond-mat.mes-hall
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