arXiv Analytics

Sign in

arXiv:2107.13664 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Christopher C. Escott, Arne Laucht, Andrew S. Dzurak

Published 2021-07-28, updated 2021-07-30Version 2

Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. We review here some key properties of the materials that have a direct impact on qubit performance and variability.

Related articles: Most relevant | Search more
arXiv:1009.4466 [cond-mat.mes-hall] (Published 2010-09-22, updated 2011-04-14)
Dephasing of electron spin qubits due to their interaction with nuclei in quantum dots
arXiv:1101.2870 [cond-mat.mes-hall] (Published 2011-01-14)
Detecting entanglement of two electron spin qubits with witness operators
arXiv:2107.14622 [cond-mat.mes-hall] (Published 2021-07-30)
Coherent control of electron spin qubits in silicon using a global field
E. Vahapoglu et al.